Physical Properties & Nanomaterial Growth

Coretec Cyclohexasilane™

Cyclohexasilane Details

Cyclohexasilane Vapor Pressure
as a Function of Temperature

Bond Enthalpy Comparison

Aerosol Assisted CVD of Si Thin Films

Comparison Of Si Film Deposition Techniques

Control of Surface Chemistry & Crystallinity

Solution/Emulsion Polymerization

Electrospun Si NWs from CHS-Based Inks

Potential for New Copolymer Physical Chemistry

Advantages of Si6H12 as a PECVD precursor

1. CHS molecule consists of 6 Si atoms which can be simultaneously delivered intothe PECVD chamber thus enabling higher deposition rate compared to traditionalmonosilane.
2. Our experiments have shown that good quality a-Si:H films can be fabricated. Thisfinding allows to partially eliminate a costly multistage purification process, thusmaking CHS a more cost efficient precursor than traditional silanes.
3. CHS has a low vapor pressure at room temperature (0.3 torr), which makes alloperations with this precursor much safer than similar operations withgaseous silanes.
4. CHS does not require any dilution when used (gaseous silanes are diluted with He).This characteristic significantly widens Si delivery and hydrogen dilution ranges.